Deviations between film and target compositions induced by backscattered Ar during sputtering from M2-Al-C (M = Cr, Zr, and Hf) composite targets

Abstract

M-Al-C (M = Cr, Zr, and Hf) thin films are deposited from stoichiometric M2AlC composite targets by direct current magnetron sputtering (DCMS) and high power pulsed magnetron sputtering (HPPMS) in an industrial coater. Using DCMS it is observed that the composition of the Cr-Al-C film is close to stoichiometric, while the Al concentration in the Zr-Al-C and Hf-Al-C films is significantly reduced compared to the Al concentration in the targets. It is evident that the magnitude of the difference in Al concentration between the target and the corresponding film composition is strongly dependent on the atomic mass of the transition metal. Zr and Hf atoms are 1.8 and 3.4 times heavier than Cr. In HPPMS, the target potential is approximately 1.6 times larger than that in DCMS, which can result in the film compositions deviating even stronger from the target composition as compared to DCMS. The Zr-Al-C thin film deposited by HPPMS exhibits a larger Al-deficiency than the film deposited by DCMS.The energy distributions of backscattered Ar neutrals are simulated by utilizing a two-body collision model and the Transport of Ions in Matter (TRIM) code. Based on the simulation results the experimentally observed Al-deficient film compositions can be readily explained: As the mass of the transition metal in the target is increased, both, energy and flux of the (at the target) reflected Ar is increased causing preferential re-sputtering of Al in the films. As stoichiometric compositions are a prerequisite for the formation of single-phase compound thin films it is evident that composite targets with a transition metal mass-dependent Al-overstoichiometry are required to compensate the Al-loss induced by the energetic Ar neutrals.