Abstract
A structure consisting of a multiple quantum well,10×[GaAs/AlxGa1-xAs], followed by two singlelayers, AlAs and AlxGa1-xAs, grown on a GaAs substrate by molecularbeam epitaxy is studied by x-ray diffraction. Poisson's ratio of AlAs isdeduced from the x-ray diffraction data based on two assumptions for therelationship between the AlGaAs lattice constant and its composition. Forthe first, Vegard's law is assumed and Poisson's ratio is found to be0.255±0.004, which is much lower than expected ({>}0.31 for III-Vsemiconductor materials). However, higher values of 0.322±0.004 and0.328±0.004 are obtained when assuming nonlinear relationshipsproposed in two previous studies. These high values are in excellentagreement with those obtained by independent measurements. Our results showthe deviation from Vegard's law in describing the relationship between thelattice constant of AlGaAs and its composition.
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