Abstract
Most traditional silicon-based detectors have advanced close to their intrinsic limits and optimization of the front-end electronics has become most crucial in improving performance for specific applications. CdZnTe and CdTe, the most promising in the hard X-ray band, are now finding real commercial applications. Si drift-type detectors are among the few silicon-based detectors whose merits have not been fully exploited. When they are used as photodiodes and combined with new high- Z, high light-yield scintillators (eg. GSO), we can expect a break-through in MeV gamma-ray detection.
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