Abstract
New 3D Si detector structures have been proposed by BNL at the end of 2005. Different from the traditional planar Si detector technology, 3D detector technology places p + and n + electrodes vertically through the entire detector thickness, thus involves 3D processing. Our new 3D structures have some new features either in configuration and/or in processing: (1) all electrodes are processed on one side of the wafer to ensure a simple, true one-sided processing; and (2) stripixel electrode configuration can be arranged to get 2D position sensitive strip-like detectors with single-sided processing. The processing of the first prototype detectors batch of the new 3D detectors with single-column (n + column on p-type substrate) has begun. All n + columns have been etched and the remaining planar processing are been finishing up. Dual electrode columns (p + and n +) one-sided 3D Si detectors are planned for future prototype batches. Electric field simulations and estimation of CCE at SLHC fluences have been carried out for the new 3D Si detectors.
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