Development, simulation and processing of new 3D Si detectors

Abstract

New 3D Si detector structures have been proposed by BNL at the end of 2005. Different from the traditional planar Si detector technology, 3D detector technology places p + and n + electrodes vertically through the entire detector thickness, thus involves 3D processing. Our new 3D structures have some new features either in configuration and/or in processing: (1) all electrodes are processed on one side of the wafer to ensure a simple, true one-sided processing; and (2) stripixel electrode configuration can be arranged to get 2D position sensitive strip-like detectors with single-sided processing. The processing of the first prototype detectors batch of the new 3D detectors with single-column (n + column on p-type substrate) has begun. All n + columns have been etched and the remaining planar processing are been finishing up. Dual electrode columns (p + and n +) one-sided 3D Si detectors are planned for future prototype batches. Electric field simulations and estimation of CCE at SLHC fluences have been carried out for the new 3D Si detectors.