Development of Ultra-Low Noise HEMTs for Cryoelectronics at ≤4.2 K

Abstract

We report on DC and noise characteristics at 4.2 K of High Electron Mobility Transistors (HEMTs) which have been realized at LPN/CNRS. This work is aimed to develop high performance, low-power, low-frequency noise and low-temperature field-effect transistors for the future cryoelectronics. A high quality two-dimensional electron gas (2DEG) based on AlGaAs/GaAs heterostructure has been used to realize appropriately designed HEMTs with different gate configurations. With these transistors, we have obtained, for example, a transconductance of about 100 mS and a voltage gain of 26 with a power dissipation of less than 100 μW at 4.2 K; and a corresponded equivalent input voltage noise of 1.2 nV/Hz1/2 at 1 kHz and as low as 0.12 nV/Hz1/2 at 100 kHz.