Development of thin quartz glass utilising through‐glass‐via (TGV) formation by dry etching technology

Abstract

The manufacturing process of through-glass-via (TGV) structure and direct implications on the design of quartz-based interposer applications for three-dimensional integrated circuit packaging technology is presented. First detailed substrate thickness formed by dry etching with various associated structures based on the use of thin quartz as a substrate material was analysed. Then, the holes etched in glass wafers by photolithography and inductively coupled plasma-reactive ion etching techniques was evaluated. The fabricated TGV morphology showed an excellent characterisation between substrate thickness, via diameter, and via shape for a vertical interposer. Finally, TGV structure with a diameter of 50 µm × 150 µm thin quartz wafer exhibit high usability for thin wafer processing with the optimised fabrication parameters was obtained.