Abstract
We present an R&D activity aiming to develop a new detector concept in the framework of the ATLAS pixel detector upgrade in view of the Super-LHC. The new devices combine 75–150 μm thick pixels sensors with a vertical integration technology. A new production of thin pixel sensors on n- and p-type material is under way at the MPI Semiconductor Laboratory. These devices will be connected to the ATLAS read-out electronics with the new Solid–Liquid InterDiffusion technique as an alternative to the bump-bonding process. We also plan for the signals to be extracted from the back of the electronics wafer through Inter-Chip-Vias. The compatibility of the Solid–Liquid InterDiffusion process with the silicon sensor functionality has already been demonstrated by measurements on two wafers hosting diodes with an active thickness of 50 μm.
Published Version
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