Abstract

Thermal detectors find a significant niche in the market of modern sensors. Bi2T3 and PbTe semiconductors are effective thermoelectrics and excellent candidates for different applications. In the present work, a technology for fabrication of p-Bi0.5Sb1.5Te3 and n-PbTe films with the high thermoelectric efficiency on thin flexible polyimide substrate has been developed. The preparation of films was performed by flash evaporation method. The high sensitivity of the devices is due to the high Seebeck coefficient of 200 mV/K and reduction of thermal conductivity of thin thermoelectric film from the bulk value. The devices operate in the Johnson-Nyquist noise limit of the thermocouple. The performance enables fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature.

Highlights

  • Thermal detectors find a significant niche in the market of modern sensors [1, 2]

  • The Film Thermoelectric Module (FTEM) consists of p- and n-type thermoelectric films with a thickness of ~ 3 μm on both sides of the substrate

  • The parallel electric connection of each type of film on both sides of the substrate and the serial connection of pand n-legs by metallic films of Au & Cr were ensured by perforation cuts in the polyimide substrate

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Summary

Introduction

Thermal detectors find a significant niche in the market of modern sensors [1, 2]. Many existing and new applications require accurate measurement of heat fluxes. Thermoelectric converters (modules) are widely used for cooling (Peltier effect) or generation of energy (Peltier and Seebeck effects) [3,4,5,6]. Seebeck effect, which is the physical basis for the thermal thermoelectric detectors. Interest in the use of thermoelectric devices as thermal detectors is very actual. Thermoelectric detectors are used to measure laser power from a few microwatts to several watts [7]

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