Abstract
We developed the growth technique of the CeBr3 scintillator single crystal by a Halide‐micro‐pulling‐down (H‐μ‐PD) method using a carbon crucible with a die under suitable temperature gradient. Four‐types after‐heaters with different configurations were prepared to control the temperature gradient around the liquid‐solid interface during crystal growth. The high temperature gradient resulted in the stable meniscus during the crystal growth and the CeBr3 single crystal with high transparency could be obtained. The light yield and the decay time under γ‐ray irradiation were ∼68,000 ph/MeV and 19 ns, respectively.
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