Abstract
Results of interferometric measurements show that one side oxidized Si wafers are deformed. The removal of SiO 2 smoothly decreases these deformations. They are minimal at the moment of the full removal of SiO 2. The sputtering of silicon after removal of SiO 2 induces mechanical stresses in the surface layer as a result of amorphization of its structure. It leads to the deformation of the Si wafer with the same sign as deformations created by the existing SiO 2 layer on silicon. After the irradiation partial relaxation of deformations takes place. The proposed technique is useful for in situ study of the kinetics of the deformations on large areas of Si wafers during the technological processes of ion implantation, deposition of thin films on and removal of thin films from their surfaces and annealing, with the aim of finding technological methods to minimize or compensate for initiated deformations.
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