Development of spin-on hard mask materials under resist in nano imprint lithography

Abstract

Nanoimprint lithography is a newly developed patterning method that employs a hard template for the patterning of structures at micron and nanometerscales. This technique has many advantages such as cost reduction, high resolution, low line edge roughness (LER), and easy operation. However, resist peeling, defects, low degree of planarization, and low throughput issues present challenges that must be resolved in order to mass produce advanced nanometer-scale devices. In this study, the new approach of using spin-on hard mask materials under the resist to modify its adhesion during a UV irradiation process in nano imprint lithography was proposed to increase process latitudes. The performance of this process is evaluated by using step and flash imprint lithography. We expect that these spin-on hard mask materials (NCI-NIL-U series) under organic resist will be one of the most promising materials in the next generation of nano imprint lithography.