Abstract

This study reports our newly developed technology for SiC solution growth. In particular, we succeed in completely suppressing solvent inclusions, which have been a serious technological problem peculiar to the solution growth method. Then, we fabricate two-inch-diameter 4° off-axis SiC wafers without solvent inclusions. Moreover, we performed their crystal defects evaluation. It was found that our wafers were low resistance n-type 4H-SiC and contain almost no basal plane dislocation. As a result, the superior quality of our solution-grown crystal was confirmed.

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