Abstract

Conductive and transparent thin films of F-doped SnO2 were deposited on soda lime silica glass by utilizing the sol-gel dipping technique. The chosen composition of Sn: F in the precursor sol was in the range 99: 1 to 97: 3 (atomic ratio). The developed films (thickness 0.1—0.8 μm; refractive index 1.6–2.0) were of cassiterite SnO2 phase. Resistivity of the films was V-type with increase of F content and passed through a minimum at Sn: F = 97.5: 2.5. Visible transmission (89%-50%) of the films was dependent on film thickness and its refractive index. Microstructure of the films indicated porous surface feature.

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