Development of Silicon Photomultiplier sensors using a 180 nm custom CMOS process technology

Abstract

Silicon Photomultiplier (SiPM) sensors with different pixel sizes and active areas were designed. The fabrication technology was developed using a 8′′ silicon wafer foundry supporting 180 nm CMOS process technology. A simulation study using process and device simulators was carried out to study the effect of critical process parameters on the device characteristics. A custom process based on CMOS process flow was developed by optimizing critical process parameters for the fabrication of SiPMs. The sensors were characterized using various techniques for the measurement of dark current, breakdown voltage, dark count rate and cross talk, response to external light at different operating voltages and light intensities. The SiPMs were demonstrated to have desired performance in terms of dark current, geometric efficiency, and dark count rate. The developed SiPMs have low dark currents ({<}5 nA/cm2) and breakdown voltage of 22 V . Initial measurements with LED light shows good linearity of SiPM response with light intensity.