Abstract
AbstractIn this paper, we discuss experimental results and the potential for improvement of blue and green laser diode (LD) performance by using semipolar substrates. We show that the InGaN quantum well (QW) grown on a semipolar plane allows higher characteristic temperature, T0, and higher optical gain, which are important for improving laser efficiency, thanks to its unique electronic spectrum properties. Epitaxial structure growth benefits from the wider process window for certain orientations. At the same time it is associated with a risk of strain relaxation, which can be addressed by appropriate strain relaxation management and/or strain balancing of waveguide core.
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