Development of Semiconductor Bridge Ignition Chip Device with Robust ESD Protection of TVS Diodes

Abstract

A new semiconductor bridge ignition chip (SBIC) device is designed, fabricated, and ESD tested. The SBIC device consists of transient voltage suppression (TVS) diode, resistor, and explosive material. The SBIC devices have been fabricated in two different groups with varying active areas: The Group A (small TVS diode active area: 215x255 μm²) and the Group B (large TVS diode active area: 215x375 μm²). Their performance is evaluated in terms of low energy ignition and safety against electrostatic discharge (ESD). The ESD properties are measured and analyzed with machine model (MM) and IEC61000-4-5 standard (surge). The Group A SBIC device was capable of withstanding 1.0 kV MM shocks while the Group B SBIC device can withstand 2.0 kV MM shocks. The surge current protection is higher for the Group B SBIC device than Group A SBIC device. The ignition of SBIC is analyzed by applying the MM currents/voltages. The firing occurred in the Group A and Group B SBIC devices when the applied MM voltage exceeds 1.4 kV and 2.4 kV, respectively. This is associated with the fact that the critical ignition voltage was related to the bridge size in the igniters and the size of TVS diodes as well. The SBIC device presented excellent operation like strong explosive fire, reduced energy for ignition, and ruggedness against ESD exposures.