Abstract
Because of difficulty in deep ion implantation, the recessed gate structure has been favored in SiC SIT. In order to improve the frequency, it is a good method to decrease the gate length by eliminating the side wall ion implantation affection. We developed normally-on RF 4H-SiC SIT with high small signal gain. The effect of forming the side wall protection between the source mesa and the gate area was simulated
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