Abstract
We have developed a new setup of scanning tunneling potentiometry (STP) applicable to semiconducting samples, which cannot be studied by conventional STP since it measures the local electrostatic potential from a voltage that makes the tunneling current zero. In the new STP setup, the local potential below the tip and its spatial distribution are obtained by measuring the applied voltage that makes the tunneling current fixed at a nonzero value. Using a gold thin film sample we demonstrated the performance of the new STP setup and found that the local potential can be measured in the nonzero tunneling current mode with an energy sensitivity of ∼20 µeV and nanometer-scale spatial resolution.
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