Abstract
Porous silicon (PSi) was formed at different current densities in the range of 5–60 mA/cm 2 by electrochemical anodized etching in HF for different durations in the range of 10–30 min. Above this PSi structure, SnO 2 films were deposited by the spin coating technique. The PSi has been characterized by X-ray diffraction studies. Peaks pertaining to PSi along with those corresponding to SnO 2 are observed. Atomic force microscopic studies indicate that very fine needle like silicon nanostructures are observed which is the result of the best PSi structure formed at 30 mA/cm 2. For the SnO 2 covered PSi structures, larger grains are observed with uniform coverage. The PSi samples prepared at current densities above and below 30 mA/cm 2 show PL spectra with asymmetric and overlapped peaks. The PL profile of thin SnO 2 film coated on PSi shows a peak at 633 nm and a small hump at about 660 nm.
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