Abstract
A simulation program which can calculate SiO2 growth and stress generation caused by growth in the thermal oxidation process of silicon is developed. This process is used in fabricating semiconductor devices. The oxidation process is modeled as a sequence of three primary processes as follows : diffusion of oxidizing species through an already existing SiO2 layer, Si/SiO2 boundary movement and dilatation of the transition region from silicon to SiO2. The finite-element method is used in diffusion analysis and stress analysis, and the body-fit method is used as an automatic mesh generator. In addition, stress dependency and the effect of 'white ribbon' on oxidation are modeled in the program to increase accuracy. Simulation results showed good agreement with experiments of some LOCOS structures with various thicknesses of the 3N4 mask.
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