Development of oxide thin-film transistor using all spin-on-glass insulators with addition of hydrogen peroxide: Buffer, gate insulator, and interlayer dielectric

Abstract

A top-gate oxide thin-film transistor (TFT) with all spin-on-glass (SOG) insulators was developed. The SOG is based on methyl siloxane and was used for the buffer layer, gate insulator, and interlayer dielectric instead of a vacuum process. The SOG was diluted with ethanol, and a small amount of hydrogen peroxide was added. The diluted SOG was applied to top-gate amorphous indium–gallium–zinc-oxide TFTs, and the effects of the dilution and the hydrogen peroxide added were investigated. The TFTs with the optimized SOG insulators showed a mobility of 7.1 cm2/(V·s), a threshold voltage of 0.5 V, a subthreshold slope of 0.1 V/dec, and an on/off current ratio of 3.6 × 107.