Development of n-type GaN film by Si and Ti co-sputtering technique on a glass substrate

Abstract

In this paper, the n-type GaN films were developed by using the Si and Ti co-sputtering technique and a ZnO buffer layer on amorphous glass substrates with different post-growth annealing temperatures for optimizing the GaN crystal quality. The GaN target was employed for the sputtering deposition of GaN films with the DC-Pulse sputtering power of 75W, while the Si and Ti targets were adopted as the doping species with the RF sputtering power of 30W, and the DC-sputtering power of 20W, respectively. The GaN films with the thermal annealing temperature of 400 oC revealed the low thin-film resistivity of $2.6\times 10^{-1}$ ohm-cm for the Si-Ti co-doped n-type GaN film with a high electron concentration of $6.65\times 10^{19}$ cm−3 using the Hall measurement. The XRD results revealed a high (002) XRD intensity with a narrow spectral line FWHM value which indicated the superior crystal growth of hexagonal structure for the GaN thin films. In addition, the PL measurement results presented the near band edge emission at 365 nm which indicated the crystal growth of the GaN thin films on glass substrates.