Abstract
Spiking neural network (SNN) has attracted much attention as next-generation neural networks. To realize SNN, the spike-timing-dependent plasticity (STDP) is one of the critical characteristics. In this study, we demonstrated the STDP of a biological synapse with non-volatile tunnel-field-effect transistor (FET) memory. Tunnel FET is a promising candidate to reduce the power consumption owing to the steep subthreshold characteristics. Therefore, non-volatile tunnel-FET memory we proposed has the possibility to realize low-power SNN. This paper reported the current-voltage characteristics, the memory window., and the STDP characteristics of the nonvolatile tunnel-FET memory.
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