Abstract
Abstract : This is the final technical report for a three-year project to identify and characterize point defects in single crystals of LiB(3)O(5) (LBO), Beta-BaB(2)O(4) (BBO), KTiOPO(4) (KTP), KH(2)PO(4), and ZnO. These materials are used to generate ultraviolet laser beams, and their performance is often limited by the present of optically active point defects. In this project, we have investigated a variety of electron and hole traps and have shown how they affect the behavior of devices. The experimental techniques used to characterize the crystals were optical absorption, visible photoluminescence, electron paramagnetic resonance (EPR), photoinduced EPR, and electron-nuclear double resonance (ENDOR). Industrial collaborators included Northrop Grumman (formerly Litton Airtron Synoptics), Lightwave Electronics, Crystal Associates, Cleveland Crystals, and Crystal Laser. Specific results during this project include (1) a detailed characterization of Ti(3+) centers in KTP, (2) identification of self-trapped hole centers in LBO and BBO crystals, (3) identification of oxygen vacancies as the primary electron trap in LBO, BBO, and KH(2)PO(4) crystals, (4) production of neutral isolated nitrogen acceptors in ZnO crystals, and (5) observation of Ag(0) atoms and Ag(2+) ions after diffusion of silver into BBO crystals.
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