Abstract
Sensors become integrated through the control condition arrangement, either for visual, mechanical, biological, or chemical applications. New stuff is designed for detection, such as Diluted Magnetic Semiconductors (DMS), which are considered attractive candidates that consist of traditional 111- V, II-VI, or group IV semiconductors. Manganese Mn-doped GaN (Mn.Gac.N) epitaxial velum has unique magnetic, visual and chemical properties for the control of systems intelligently in detector design. The subject area of the magnetic properties of MnxGal-xN is on a large scale available; there are only a few studies on the visual properties and electrochemical properties of MnxGal-xN epitaxial velums. Where MnGaN velums were used in spintronic and opto-electronic applications according to their magnetic characterization and constructed MnGaN electrodes have drop-fabric potentials for potentiometric sensor applications, since they have good performance as ion-selective electrodes. The electrical and magnetic properties that allow the control of electron spin as well as compliant period, makes the materials ideal for spintronic applications. Designing such spintronic and optoelectronic devices based on MnxGal-xN requires a broader agreement of physical, visual, electrical and chemical properties of epitaxial velums that are still seldom found in the literature. This bailiwick displays the potential use of MnGaN semiconductor as an all solid-state potentiometric sensor for measuring anions in solutions in the control-engineering field.
Highlights
Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxial film MnGaN has been examined by Secondary Electron Emission, Ultraviolet (UV) measurements, X-Ray Diffraction (XRD), Open Circuit Potential (OCP), and Energy Dispersive X-ray Spectrometer (EDS), for its crystalline quality and surface structure, optical characterization, and electrochemical properties [1]
This study demonstrates the potential utilization of MnGaN semiconductor as an all solid-state potentiometric device for measurement of anions in solutions in the control-engineering field
The EDS x-ray detector measured the relative abundance of emitted X-rays versus their energy, the MnxGaI-xN thin films EDS
Summary
Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxial film MnGaN has been examined by Secondary Electron Emission, Ultraviolet (UV) measurements, X-Ray Diffraction (XRD), Open Circuit Potential (OCP), and Energy Dispersive X-ray Spectrometer (EDS), for its crystalline quality and surface structure, optical characterization, and electrochemical properties [1].The perfect crystal structure, magnetic properties, and distribution of elements are clearly discussed and demonstrated by high-resolution XRD and EDS measurements, which provide the practical data for the relative calculation. Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxial film MnGaN has been examined by Secondary Electron Emission, Ultraviolet (UV) measurements, X-Ray Diffraction (XRD), Open Circuit Potential (OCP), and Energy Dispersive X-ray Spectrometer (EDS), for its crystalline quality and surface structure, optical characterization, and electrochemical properties [1]. Optical characterizations, for example, the energy band gap of MnGaN changes in the range 1.geV-3.5eV, are revealed by the UV measurements [2]. It is a great discovery for semiconductor nanotechnology of traditional III - V, II-VI, or group IV semiconductors [3]. This study demonstrates the potential utilization of MnGaN semiconductor as an all solid-state potentiometric device for measurement of anions in solutions in the control-engineering field
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