Development of new photon detection device for Cherenkov and fluorescence radiation

C Aramo,S Santucci,E Fiandrini,E Nappi,M Cilmo,R Battiston,G Pignatel,A Ambrosio,P Castrucci,A Tinti,F Guarino,M Scarselli,A Valentini,M De Crescenzi,V Grossi,M Passacantando,P Maddalena,M Ambrosio

doi:10.1051/epjconf/20135308014

Abstract

Recent progress on the development of a new solid state detector allowed the use of finely pixelled photocathodes obtained from silicon semiconductors. SiPM detectors seem to be an ideal tool for the detection of Cherenkov and fluorescence light in spite of their not yet resolved criticism for operating temperature and intrinsic noise. The main disadvantage of SiPM in this case is the poor sensitivity in the wavelength range 300-400 nm, where the Cherenkov light and fluorescence radiation are generated. We report on the possibility to realize a new kind of pixelled photodetector based on the use of silicon substrate with carbon nanotube compounds, more sensitive to the near UV radiation. Also if at the very beginning, the development of such detector appears very promising and useful for astroparticle physics, both in the ground based arrays and in the space experiments. The detectors are ready to be operated in conditions of measurements without signal amplification.

Highlights

Multiwall carbon nanotubes (MWCNTs) consist of multiple layers of graphite sheets forming concentric cylinders, from two to many tens
We report on the possibility to realize a new kind of pixelled photodetector based on the use of silicon substrate with carbon nanotube compounds, more sensitive to the near UV radiation
The devices used for these measurements, in the absence of carbon nanostructures grown on their surface, show a backside MIS (Metal-Insulator-Semiconductor) junction between the n-doped silicon substrate and the metallic electrode [4]

Summary

INTRODUCTION

Multiwall carbon nanotubes (MWCNTs) consist of multiple layers of graphite sheets forming concentric cylinders, from two to many tens. We present a novel large area photodetector featuring low noise, good efficiency in the wavelength range from 200 to 1000 nm and great surface uniformity This detector has been obtained by coupling the optoelectronic characteristics of carbon nanostructures (CNs) with the well-known optoelectronic properties of silicon. The proposed device mimics the behaviour of a p-n-p phototransistor where the carbon nanostructure/silicon interface acts as the base, while the emitter is the Schottky.

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DISCUSSION

CONCLUSION