Abstract
The article describes IUHFSE RAS experience in designing MMICs based on gallium nitride heterostructures on various types of substrates: sapphire, silicon and silicon carbide in the frequency range from 10 GHz to 96 GHz. Such as power amplifiers, low-noise amplifiers, and a chipset for radio communications and radiolocation: voltage-controlled oscillators, mixers, multi¬pliers, and transceiver MMIC with integrated antennas. HEMT transistors based on gallium nitride are a suitable for creating a radiation resistant components for frequencies up to 100 GHz.
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