Abstract

Development of information and communication systems of new generation (5G) takes much time, needs financial support, and causes many debates around the most suitable frequency bands for it’sapplication. Meanwhile, single band are likely to be designated on a worldwide basis for millimeter-wave 5G in the immediate future. This paper describes the design, layout, and performance of power amplifiermonolithic microwave integrated circuit (MMIC) 26 – 30 GHz band. The design was implemented on 0.25µm gate length GaAspHEMT process and has an output power capability of 1 W at 1dB gain compression (P-1dB) and PAE of 20% with a small signal gain of 20dB.

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