Development of low temperature amorphous tin-doped indium oxide thin-film transistors technology

Yang Liu Yang Liu,Shengdong Zhang Shengdong Zhang,Longyan Wang Longyan Wang

doi:10.1109/edssc.2014.7061118

Development of low temperature amorphous tin-doped indium oxide thin-film transistors technology

Yang Liu Yang Liu, Shengdong Zhang Shengdong Zhang + Show 1 more

https://doi.org/10.1109/edssc.2014.7061118

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Publication Date: Jun 1, 2014

Affiliation: Peking University

#Indium Oxide Thin Film Transistors #Tin-doped Indium Oxide Thin Film + Show 8 more

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Abstract

We successfully fabricated high performance amorphous tin-doped indium oxide (a-ITO) thin film transistors (TFTs) at low temperature (≤ 150 °C) for full-transparent, flexible and large area electronics applications. The fabricated a-ITO TFT has a typical threshold voltage (Vth) of about 0.12 V, an acceptable carrier mobility of 7.6 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s, and a steep subthreshold swing of 174 mV/decade. The on/off current ratio is more than 1×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> .

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