Abstract
We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e−/s at 60 °C.
Highlights
CMOS image sensors with global shutter (GS) are becoming popular [1,2,3]
The pixel was designed with 3110 nmthe node process,ofincluding double lens, three-layerThe
The incident light collected by the upper lens should be concentrated on the inner lens in curvature inner lens, a large amount of oblique light bent by the inner lens enters the memory node (MN) as shown order to improve the quantum efficiency (QE), and the (a) inner lens should be designed so(b) that light enters straight into the Si
Summary
CMOS image sensors with global shutter (GS) are becoming popular [1,2,3]. It is possible to capture the shape of a high speed moving object with high accuracy without distortion. Schematic and diagram of storage-gate based memory node.can reduce pixel noise to below 1 to 2 electrons [7,8] This read noise is much better than that of 5T charge transfer pixels without CDS [1]. Such MN shows much smaller dark current. Considering the in dual transfer both transfer and storage can enlarge its gate area, and it can enhance potential controllability It MN diffusion used as MN in 5T-GS pixels [9]. 2, of storage-gate based is higher than that of the pinned due to dark current generation at MN shown, the storage-gate can control the depletion potential of the MN.
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