Abstract
Abstract P-I-N diodes, operating partially or fully depleted, have been made with a planar process with a high resistivity 3k–6k ohm cm (111) FZ silicon. The reliability and repeatabilitiy of the process is guaranteed by the techniques already known and used in production of discrete power devices, with appropriate adaptations. The process developed is IC compatible. The leakage control is obtained by reducing residual ion implantation damage with high temperature annealing and by proved gettering techniques. A value of 5 nA/cm 2 has been obtained.
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