Abstract
Knife-edge field emission cathodes have been fabricated on (110) silicon wafers. The emitter structure consists of an array of razor shaped silicon knife edges standing up on silicon substrates. The radii of the sharp edges seen with SEM are less than 250 Å; the height of the knife edges is 5 to 8 μm; and the gate-emitter spacing is ∼0.1 μm. Because of the very small gate-emitter spacing and the large height/width ratio of the emitter, the structure resembles an optimized emitter geometry concluded from our study. The fabrication process and results are presented.
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