Abstract
InxGa1−xAs-based ohmic contacts which showed excellent contact properties for n-GaAs were demonstrated to be applicable to p-GaAs ohmic contacts. These contacts, prepared by radio-frequency sputtering, provided low contact resistance (0.2 Ω-mm), excellent thermal stability, smooth surface, and good reproducibility. The contact resistances had a weak dependence on the annealing temperatures, which was desirable in a manufacturing view point. This weak temperature dependence was explained to be due to a unique Schottky barrier height at the metal/p-InxGa1−xAs interface which does not depend on the In concentration in the InxGa1−xAs layer. The present experiment showed the possibility of simultaneous preparation of ohmic contacts for both n and p-GaAs using the same contact materials.
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