Abstract
InTiZnO gas sensors with different oxygen ratios were fabricated by RF sputtering at room temperature. The sensing responses for five different gases, including ethanol, isopropanol (IPA), acetone (ACE), CO, and SO2, were reported. The InTiZnO gas sensor with the MSM (metal–semiconductor–metal) structure generated a higher sensing response when the O2/Ar ratio was increased to 10%. It also revealed high selectivity among these gases and good repeatability. Moreover, the UV light-activated InTiZnO gas sensors were also studied, which could reduce the operating temperature from 300 °C to 150 °C and did not seem to damage the sensing film, demonstrating long-term stability. The high response and selectivity revealed that InTiZnO thin films possess high potential to be applied in gas sensing technology.
Highlights
A 5Vtobias applied to the the top sensor across the top interdigitated current conduction.current
We could see that the InTiZnO film was the N-type
When comparing the responsivity of different oxygen ratios for ethanol, IPA, ACE, and carbon monoxide (CO), we found that
Summary
The following procedures were used fabricate thesensor. gas 1sensor. Quartz weresubstrates cleaned with acetone, shows of the substrates device. Quartz were cleanedisopropyl with acetone, isopropyl alcohol, and deionized water sequentially every five minutes in five an ultrasonicator. Deionized (DI) water sequentially every minutes in an ultrasonicator. After rinsing, they were dried with nitrogen. The 200 nmfilm thin film on wasquartz deposited on quartz substrates with various oxygen flow ratios by sputtering target = 99:1:99 in with various oxygen flow ratiosan byInTiZnO sputtering an InTiZnO Before the deposition, sputtering chamber was pumped at a base down at a base molar ratio). 80 W, andwere the substrates were rotated at a speed of 20 rpm. Flow rotated at a speed of 20 rpm.
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