Abstract
AbstractA hot‐carrier simulator (H2‐CAST) is developed using the “effective electron temperature model;” and with this simulator, the LDD structure is analyzed. This simulator is based on a 3‐D device simulator, where the carrier motion in the oxide film is also considered. The model equation for the channel hot electron region and the avalanche hot electron region in the NMOS single‐drain structure is evaluated. It is found that the model is valid for an analysis of the hot‐carrier injection phenomena in both regions. From the analysis of the LDD structure, it is apparent that the injection of the avalanche hot‐holes is responsible for the degradation of the device characteristic. This simulator is considered to be an effective tool in designing a device with an effective channel length Leff less than 0.8 μm.
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