Abstract
Sensing and imaging for ultraviolet (UV) and near infrared (NIR) bands has many applications for NASA, defense, and commercial systems. Recent work has involved developing UV avalanche photodiode (UV -APD) arrays with high gain for high resolution imaging. Various GaN/AlGaN p-i-n (PIN) UV -APDs have been fabricated from epitaxial structures grown by MOCVD on GaN substrates with avalanche gains higher than $5\times 10^{5}$ , and significantly higher responsivities. Likewise, the SiGe material system allows the demonstration of high-performance detector array technology that covers the 0.5 to $1.7 \mu \mathrm{m}$ wavelength range for visible and NIR bands of interest. We have utilized SiGe fabrication technology to develop Ge based PIN detector devices on 300 mm Si wafers. We will discuss the theoretical and experimental results from electrical and optical characterization of the detector devices with various $n^{+}$ region doping concentrations to demonstrate low dark currents below $1 \mu \mathrm{A}$ at −1 V and high photocurrent. Recent results from these detector arrays for UV and NIR detection will be presented.
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