Abstract
In this study, a basic design of area-arrayed graphene nanoribbon (GNR) strain sensors was proposed to realize the next generation of strain sensors. To fabricate the area-arrayed GNRs, a top-down approach was employed, in which GNRs were cut out from a large graphene sheet using an electron beam lithography technique. GNRs with widths of 400 nm, 300 nm, 200 nm, and 50 nm were fabricated, and their current-voltage characteristics were evaluated. The current values of GNRs with widths of 200 nm and above increased linearly with increasing applied voltage, indicating that these GNRs were metallic conductors and a good ohmic junction was formed between graphene and the electrode. There were two types of GNRs with a width of 50 nm, one with a linear current–voltage relationship and the other with a nonlinear one. We evaluated the strain sensitivity of the 50 nm GNR exhibiting metallic conduction by applying a four-point bending test, and found that the gauge factor of this GNR was about 50. Thus, GNRs with a width of about 50 nm can be used to realize a highly sensitive strain sensor.
Highlights
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba, Citation: Suzuki, K.; Nakagawa, R.; Abstract: In this study, a basic design of area-arrayed graphene nanoribbon (GNR) strain sensors was proposed to realize the generation of strain sensors
GNRsGNRs and evaluated the quality strainand strain and optimizing the measurement current properties or voltage in there is high potential dependence of their electrical conduction order to realize a GNR-based strain dependence of their electrical conduction properties in order to realize a GNR-based strain for the development of high-sensitivity strain sensors by applying
50 nm were fabricated by electron beam (EB) lithography between metal electrodes with 18 μm spacing
Summary
In order to establish a stable and reliable fabrication process of the device using GNRs, the synthesis of a high-quality, single-layer graphene sheet is one of the important factors. PMMA layer was not dissolved in TMAH, applied using (polymethyl methacrylate) This transfer process is known as and only HSQ was developed. After the graphene was transferred onto the Si substrate, a Pt layer with a 5 nm thickness and a Au layer with an 80 nm thickness were deposited continuously by EB deposition using a stencil mask to form metal electrodes. As PMMA has a high affinity for graphene, sufficient adhesion can be achieved with low-temperature curing compared to the case of a single layer of HSQ. The etching rate of PMMA with O2 plasma was 30 to 40 times larger than that of HSQ, and the HSQ pattern could be transferred to the graphene layer [28].
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