Abstract
We developed a new chemically amplified molecular resist that showed high resolution by introducing an efficient acid-leaving group to 1,3,5-Tris(p-(p- hydroxyphenyl) phenyl) benzene (THTPPB). The lithographic properties such as sensitivity, developing rate, and adhesion are considered to be controlled using a suitable acid-leaving group. A molecular resist of THTPPB to which is attached with an alicyclic acid-leaving group, hyperlactyl group (HPVE) showed a high resolution for electron beam (EB) lithography and good etch resistance. Half-pitch (hp) 36 nm L&S (1:1) positive pattern was fabricated using 100 keV EB with a new molecular resist based on HPVETPPB.
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