Abstract
We describe development of semiconductor X-band high-power RF switches. The target applications are high-power RF pulse compression systems for future linear colliders. We describe the design methodology of the architecture of the whole switch systems. We present the scaling law that governs the relation between power handling capability and number of elements. We designed and built several active waveguide windows for the active element. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of a few megawatts at X-band.
Highlights
In recent years there have been many suggestions for the rf pulse compression and power distribution systems for the Linear Collider [1]
One of the most attractive systems for high power pulse compression is the so-called SLED II system [2]. This system is based on storing the rf energy in resonant delay lines and switching, or discharging, it by means of phase manipulations. This system suffers from low efficiency at high compression ratios; the compression ratio being the ratio between the input pulse width and the output pulse width
The development of passive rf pulse compression systems has led to the invention of many novel rf components and systems which must handle up to 600 MW of pulsed power at X-band
Summary
In recent years there have been many suggestions for the rf pulse compression and power distribution systems for the Linear Collider [1]. One of the most attractive systems for high power pulse compression is the so-called SLED II system [2] This system is based on storing the rf energy in resonant delay lines and switching, or discharging, it by means of phase manipulations. The development of passive rf pulse compression systems has led to the invention of many novel rf components and systems which must handle up to 600 MW of pulsed power at X-band. These include passive waveguide components [4] and nonreciprocal devices [5]. We report the development of a switch made from a p-i-n diode array operating in an overmoded waveguide carrying the TE01 mode
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