Abstract
The high power terahertz (THz)-time domain spectroscopy (TDS) system has been designed based on S-band compact electron linac at Advanced Industrial Science and Technology (AIST). The THz pulse is expected to have the peak power of about 25 kW with frequency range 0.1–2 THz using the 40 MeV electron beam which has about 1 nC bunch charge with 300 fs bunch length (rms). The aptitude discussion of the EO sampling method with ZnTe crystal was accomplished to apply to our THz-TDS system. The preliminary experiment of the absorption measurements of P-PPV on the Si wafer has been successfully demonstrated using the 0.1 THz coherent synchrotron radiation (CSR) pulse and W-band rf detector. It is confirmed that the intense of the THz pulse is enough to perform the THz-TDS analysis of the sample on the Si wafer. In near future, the investigation of the un-researched materials will be started in the frequency range 0.1–2 THz with our high power THz-TDS system.
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