Abstract
ABSTRACTYBa2Cu3O7 (YBCO) films have been deposited by photo-assisted MOCVD at rates of greater than 0.3μm/min on both single crystal oxide substrates and atomically textured metallic substrates. The YBCO films of thickness from 0.5μm to 3μm deposited on LaAlO3 substrates are shown to be highly atomically ordered with Jc> 1 × 106 A/cm2. CeO2 buffer layers have also been developed by photo-assisted MOCVD for the integration of YBCO with metallic substrates. The CeO2 layers were found to be crack-free when grown on nickel even above 1 micron thickness, and exhibited crystal orientation and in-plane alignment similar to that of the atomically textured Ni substrates. YBCO films grown on the thick CeO2 buffer layers on nickel substrates have shown promising results with Jc∼6 × 105 A/cm2.
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