Abstract
Room temperature nuclear radiation detectors with energy discrimination capability developed by growing thick cadmium telluride (CdTe) epitaxial layers directly on n+-Si substrates in a metal-organic vapor phase epitaxy system is reported for the first time. The CdTe/n+-Si heterojunction diode detector exhibited good rectification and charge collection properties. The reverse leakage currents were typically 1times10-7 to 5times10-7 A/cm2 at 50-V bias. The detector clearly demonstrated its energy discrimination capability by resolving gamma peak from the 241Am radioisotope during radiation detection test at room temperature
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