Abstract
Diode lasers with InGaAs strained-layer quantum wells and GaInP cladding layers for operation at 980 nm have been investigated. Two types of device structure, differing in the optical-waveguide material have been grown by organometallic vapor phase epitaxy. Threshold current densities as low as 85 A/cm 2 and differential efficiencies as high as 93% have been measured on broad-area devices. Mass transport of GaInP and GaInAsP alloys has been used to fabricate buried-heterostructure lasers with threshold currents as low as 3 mA and output powers of 30 mW/facet for uncoated devices. Threshold currents of 7 mA and single spatial mode output power in excess of 50 mW/facet have been obtained for uncoated, ridge-waveguide lasers.
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