Abstract

Focused-ion beam (FIB) repair technique is one of the important technologies for quality and productivity of attenuated phase shift mask (HT-PSM),especially for KrF lithography. Mainly, accurate and low damage technique are necessary for HT-PSM repair. Such requirements are satisfied with the improvement of gas-assisted etching (GAE) technique for FIB. New SIR-3000 made by Seiko Instruments has been developed for applying MoSi material etching. Using GAE technique, the transmittance evaluated from AIMS at repaired area was more than 99% (i-line), and 96 - 97% (KrF) without post process (Qz reference: 100%). The results indicate the focused-ion beam repair is applicable without post process to MoSi-based HT-PSM for KrF lithography. This paper report the characterization results of opaque defect repair on MoSi-based HT-PSM using new SIR-3000.

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