Abstract
A combination of the sputtering deposition and high-temperature annealing is a promising technique for preparing low-dislocation-density AlN templates. In this talk, MOVPE growth behavior of AlGaN films grown on the annealed AlN templates and on conventional MOVPE-grown AlN templates was comprehensively discussed. The low density of screw- and mixed-type dislocations of the annealed AlN templates invoked the formation of hillock structures. By adjusting the MOVPE growth conditions and utilizing sapphire substrates with appropriate surface off-cut, dislocation-induced hillock structures were suppressed. Improved surface flatness resulted in higher EQE and better wavelength uniformity of the DUV-LED fabricated on the annealed AlN templates.
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