Abstract
Strained Silicon Technology is known for its ability to enhance carrier mobility while simultaneously boost MOSFET devices performance. Double strained silicon channel MOSFET with strained silicon-germanium sandwiched in between has been developed, incorporating quantum effects for counter balancing the reduced threshold voltage. A comparison of the conventional strained silicon on relaxed silicon-germanium with the double strained silicon channel MOSFET is perceived. Based on the simulation results, the heterostructure MOS channel has shown superior device characteristics with a small reduction in the threshold voltage by increasing strain in the channel region.
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