Abstract
The rapid advancements in optical communication technology led intensive research and developmental study on the specific opto-electronic materials such as gallium antimonoide (GaSb) and indium antimonoide (InSb). In view of their potential applications in select data storage, conversion and mixing of frequency and parametric oscillations etc. have instigated a lot of interest for research and fabrication of GaSb devices. Purity of these compounds plays a major role in realizing the superior material properties and thus these high purity materials used in the fabrication of quality devices for high end applications. The system and the process helps in reduction of vibrations during the synthesis and crystallization process and thus yields GaSb compound in high pure form. This paper presents the design and development of directional freezing, solidification system and preparation. The characterization analysis by XRD, SEM and TEM techniques for high pure gallium antimonoide (GaSb) compound.
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