Development of dicing technique for thin semiconductor substrate using temporally shaped femtosecond laser

Abstract

AbstractRecently, semiconductor substrates for integrated circuits (ICs) have been required to be as thin as 50 µm, because many electronic devices must be miniaturized and light in weight. Machining of such thin substrates with conventional dicing techniques is very difficult. Therefore, we have proposed processing them using femtosecond laser ablation. In this work, we investigate the influence of conditions of a double pulsed laser such as the delay time and fluence on the depth and diameter in order to develop a new dicing technique for very thin ICs. A double pulsed laser (λ = 780 nm, τ = 150 fs, f = 10 Hz, Δt = 0 to 100 ps, E1 + E2 = 100 µJ) was focused on the Si substrate with a plano‐convex lens having a nominal focal length of 100 mm. At a delay time of 10 ps, singularly shallow and flat‐bottomed holes were obtained. When the substrates were diced under these conditions, the bottom of the processing groove was flat and very smooth, whereas many microcracks starting from the bottom of the groove formed by the conventional method have been observed. From these results, we were able to identify femtosecond laser processing conditions that were applicable to dicing of thin Si substrates. © 2004 Wiley Periodicals, Inc. Electr Eng Jpn, 149(3): 43–48, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20028