Abstract
Pb(Zr, Ti)O3 piezoelectic material (PZT) has been utilized for a microactuators or microsensors, because of a higher power and a larger displacement than the other piezoelectric materials such as BaTiO3. But, there remains the difficulty to find a best materil process of a very thin film actuator. In this study, PZT thin films were deposited onto a heated Invar alloy substrate by using a high temperature RF magnetron sputtering appoaratus. When the ceramic target is used, the deposition rate and crystal structure of the film has strongly affected by the position of substrate against the target, as well as the temperature, the gas flow rate, the composition of target, and so on. We found the best position of substrate against the target to have a high-deposition rate and an optimum crystal structure, such as within 40∼70% distance from a center of the target in the radial direction. The crystalline structure of deposited PZT in this region was also measured by XRD. The largest intensity of crystal plane (110) PZT Perovskite structure was observed.
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