Abstract

To follow the Moore’s law, the advanced Cu slurry needs to continue the trend of cost reduction and performance improvement at the same time. With the technology node shrinking, there is a need to develop a Cu slurry with fast rate for high throughput and low dishing for minimal within die and within wafer variation, and stringent defect requirement such as residue, corrosion, and micro scratches. In this paper, we introduce a high performance Cu CMP slurry to overcome these performance challenges in Cu CMP process. The impact of slurry formulation on the slurry performance will be presented under different process conditions, including blanket removal rates/profiles, static etch rates, dishing, Cu residue clearance capability and corrosion status. Electrochemical study was also conducted to support the results and performance. With the optimized formulation and polishing process, the slurry achieves dishing under 300A at near 1 um Cu polishing rate. For multiple layers stacking, the slurry also has tunable dishing to provide a wide process integration window.

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